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Effect of an asymmetry AlGaN barrier on efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes
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10.1063/1.3513394
/content/aip/journal/apl/97/18/10.1063/1.3513394
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3513394
/content/aip/journal/apl/97/18/10.1063/1.3513394
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/content/aip/journal/apl/97/18/10.1063/1.3513394
2010-11-04
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of an asymmetry AlGaN barrier on efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3513394
10.1063/1.3513394
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