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The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor
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10.1063/1.3513400
/content/aip/journal/apl/97/18/10.1063/1.3513400
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3513400
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Evolution of the transfer characteristics for the (a) /HIZO, (b) /HIZO, and (c) /HIZO devices as a function of the NBTIS time. (d) shift as a function of the applied NBITS time for the HIZO TFT with various gate dielectric materials and structures.

Image of FIG. 2.
FIG. 2.

Schematic band diagram to explain the observed experimental result, which is based on (a) trapping or/and injection of a photoinduced hole carrier and (b) transition of neutral oxygen vacancy to charged state by photon irradiation.

Image of FIG. 3.
FIG. 3.

Band diagrams of the various gate dielectric materials/HIZO stack structures, which were constructed to understand the light-induced bias instability: (a) /HIZO device, (b) /HIZO device, and (c) /HIZO device.

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/content/aip/journal/apl/97/18/10.1063/1.3513400
2010-11-04
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3513400
10.1063/1.3513400
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