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Schematic drawing of the multisection laser diode.
Measured spectra of the amplification coefficient of a multisection laser diode with cavity length and absorber at −9 V absorber bias (dashed curves) and absorber bias equal to gain section bias (solid curves). The gain section currents are 100 mA (upper curve each) and 90 mA (lower curve each). The arrow marks the sum of internal losses and mirror losses .
Absorption spectra of a absorber section in a cavity at absorber bias voltages from −12 to −2 V [(a), bottom to top curve] and −1 to 7 V [(b), top to bottom curve] in 1 V increments. The insets show the absorption at the laser wavelength of 430 nm as a function of absorber voltage.
Calculated band edge profiles of the active region (a) for −1 V (left), −6 V (center), and −14 V (right) bias voltage. The shaded regions mark the InGaN QWs. Internal field in the QWs (b), squared wave function overlap and transition energy (c) of the electron–heavy hole transition as functions of bias voltage.
Simulated absorption spectra for bias voltages from −14 to 0 V in 1 V increments (bottom to top, curves for −3 to 0 V are nearly identical). The inset shows the calculated absorption at a wavelength of 430 nm as a function of bias voltage (solid line) and the experimental data points (circles).
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