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Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction
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10.1063/1.3514240
/content/aip/journal/apl/97/18/10.1063/1.3514240
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3514240
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Figures

Image of FIG. 1.
FIG. 1.

The sketch of the elementary unit cell of (Ga,Mn)As with substitutional, int(As) and int(Ga) positions of Mn ions (upper left panel), and the energy dependence of the square of the structure factor of (Ga,Mn)As calculated for Mn ions in substitutional and two interstitial positions denoted int(Ga) and int(As). We used the Mn density of 1%, and strong 004, intermediate 113, and weak 002 diffractions. The values are normalized to the square of the structure factor of pure GaAs.

Image of FIG. 2.
FIG. 2.

RSM of sample B measured at 6.4 keV in symmetric diffraction 002 (left) and the -dependence of the measured intensity integrated along the horizontal reciprocal axis (right).

Image of FIG. 3.
FIG. 3.

The heights of the layer maxima normalized to the substrate maxima of samples A and B obtained from the RSMs measured at various energies in diffraction 002 (points) and the theoretical fits (lines).

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/content/aip/journal/apl/97/18/10.1063/1.3514240
2010-11-03
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3514240
10.1063/1.3514240
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