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Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric
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10.1063/1.3514249
/content/aip/journal/apl/97/18/10.1063/1.3514249
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3514249

Figures

Image of FIG. 1.
FIG. 1.

(a) GI-XRD patterns of bare ITO/ATO and a-IGZO films prepared on ITO/ATO. (b) XRD patterns of thick a-IGZO films prepared on glass substrates obtained in Bragg–Brentano geometry. The inset shows the GI-XRD patterns of thick a-IGZO (311) films prepared at 400 and on glass substrates. (c) Cross sectional SEM image of a-IGZO (311) TFT and (d) top view SEM image of a-IGZO (311) film.

Image of FIG. 2.
FIG. 2.

Three-dimensional AFM images of (a) bare ATO and a-IGZO (b) 3:1:1, (c) 3:1:2, and (d) 3:1:3 films deposited on ATO.

Image of FIG. 3.
FIG. 3.

Output characteristic curves of a-IGZO (a) (311), (b) (312), and (c) (313) TFTs, and (d) transfer characteristics of different a-IGZO TFTs obtained in forward sweep.

Tables

Generic image for table
Table I.

Extracted electrical parameters of a-IGZO TFTs.

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/content/aip/journal/apl/97/18/10.1063/1.3514249
2010-11-04
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3514249
10.1063/1.3514249
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