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Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric
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10.1063/1.3514249
/content/aip/journal/apl/97/18/10.1063/1.3514249
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3514249
/content/aip/journal/apl/97/18/10.1063/1.3514249
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/content/aip/journal/apl/97/18/10.1063/1.3514249
2010-11-04
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/18/10.1063/1.3514249
10.1063/1.3514249
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