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Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage
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Image of FIG. 1.

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FIG. 1.

Schematic presentation of the origin of cross-talk in 4-bit memory array. The cross bars consist of two word lines (W) and two bit lines (B). W1B1 is set to “0” while the other three bits are set to “1.” (a) An array based on resistive switches. (b) An array of resistive switches with integrated rectifying diodes.

Image of FIG. 2.

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FIG. 2.

(a) SEM micrograph of the phase separated morphology and (b) J-V characteristics of a bistable rectifying diode based on a phase separated blend of a ferroelectric polymer, P(VDF-TrFE) and a semiconducting polymer, PFO. SEM was taken at a tilt angel of 52°. The diode is fabricated with a gold bottom electrode and a LiF/Al top electrode. Device area amounted to . The diode is poled with pulses of , exceeding the coercive field. The voltage axis is corrected for the built-in voltage of about 1.5 V. The inset in part (b) shows the device layout.

Image of FIG. 3.

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FIG. 3.

Logic table of a 4-bit memory array given in Fig. 1(b), comprising 16 different logic states. The off-state current level, “0,” is . The on-state current level, “1,” is . The experimental noise level is about . The striking feature is the identification of the 1110, 1101, 1011, and 0111 states. These states are most prone to cross talk but the high resistance “0” bit can still unambiguously be assigned.

Image of FIG. 4.

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FIG. 4.

(a) A photograph of a crossbar memory array. The electrode linewidth and spacing are about 3 mm. (b) Equivalent circuit of the array shown in Fig. 4(a); programmed into the 111101111 logic state. (c) The current passing through each individual bit in the 111101111 logic state as the measurement time elapsed. The measurement shows that cross talk is eliminated; the programmed state is nondestructively read out.

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/content/aip/journal/apl/97/19/10.1063/1.3508948
2010-11-11
2014-04-23

Abstract

Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts simultaneously as a bistable rectifying diode. A logic table of a 4-bit memory and integration into a cross bar array are demonstrated. The most difficult state, a high resistance bit completely surrounded by low resistance bits could be unambiguously identified.

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Scitation: Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3508948
10.1063/1.3508948
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