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Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage
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Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts simultaneously as a bistable rectifying diode. A logic table of a 4-bit memory and integration into a cross bar array are demonstrated. The most difficult state, a high resistance bit completely surrounded by low resistance bits could be unambiguously identified.
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