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Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor
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10.1063/1.3508955
/content/aip/journal/apl/97/19/10.1063/1.3508955
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3508955
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Transfer characteristic after applying a negative gate bias of −20 V (in dark) for 2000 s. (b) Transfer characteristic after applying a negative gate bias of −20 V and the optical stress of for 2000 s.

Image of FIG. 2.
FIG. 2.

(a) Threshold voltage shift vs stress time in various conditions of gate biases and light intensities. The threshold voltages were extracted by a constant current method at . (b) Gate current vs sampling time under various gate biases and light intensities of white LED (inset shows wavelength spectrum of the white LED used in this experiment).

Image of FIG. 3.
FIG. 3.

(a) Maximum gate current vs the wavelength of light source (molybdenum gate vs copper gate). (b) Transfer characteristics after applying a negative gate bias of −20 V and red light illumination of for 500 s. (c) Transfer characteristics after applying a negative gate bias of −20 V and blue light illumination of for 500 s.

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/content/aip/journal/apl/97/19/10.1063/1.3508955
2010-11-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3508955
10.1063/1.3508955
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