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On-chip superconductivity via gallium overdoping of silicon
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View: Figures


Image of FIG. 1.
FIG. 1.

Temperature dependence of the sheet resistance for samples annealed at different temperatures. Within a narrow annealing-temperature window , superconductivity at about 7 K is observed. The inset highlights the effect of etching away the cover including the segregated Ga layer.

Image of FIG. 2.
FIG. 2.

Calibrated Ga-concentration depth profiles obtained from RBS/C measurements. Upon annealing at temperatures up to , a 10 nm wide Ga peak at the interface appears. Annealing at higher temperatures leads to a Ga out-diffusion. Interface mixing results in a transition region between Si and .

Image of FIG. 3.
FIG. 3.

Temperature dependence of the upper critical field parallel (open squares) and perpendicular (filled squares) to the superconducting layer for a sample annealed at . The solid line indicates a parabolic fit, while the dashed line is a guide to the eyes. The inset shows current-voltage characteristics at 4 K (closed circles) as well as 6 K (open circles) which reveal a critical current density of more than .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On-chip superconductivity via gallium overdoping of silicon