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Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap
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10.1063/1.3509416
/content/aip/journal/apl/97/19/10.1063/1.3509416
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3509416
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transient RHEED intensities of two InGaN samples: 10 s. (top) and 4 s. (bottom) metal shutter open time per cycle (bottom).

Image of FIG. 2.
FIG. 2.

XRD scans and surface morphologies of samples grown with a large dose (a), small dose (b), and small dose with GaN cap (c). AFM images are on 30 nm Z scale.

Image of FIG. 3.
FIG. 3.

diffraction patterns of a wide range of compositions of InGaN exhibiting no phase separation or indium segregation with corresponding (002) rocking curve FWHMs.

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/content/aip/journal/apl/97/19/10.1063/1.3509416
2010-11-08
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3509416
10.1063/1.3509416
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