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Transient RHEED intensities of two InGaN samples: 10 s. (top) and 4 s. (bottom) metal shutter open time per cycle (bottom).
XRD scans and surface morphologies of samples grown with a large dose (a), small dose (b), and small dose with GaN cap (c). AFM images are on 30 nm Z scale.
diffraction patterns of a wide range of compositions of InGaN exhibiting no phase separation or indium segregation with corresponding (002) rocking curve FWHMs.
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