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(a) A typical SEM image of the randomly packed AlN nanowires. (b) A magnified SEM image of a single AlN nanowire. (c) Cross-section SEM image of interface between AlN nanowires and SiC substrate. (d) A HRTEM image of the AlN nanowire and the SAED pattern.
(a) Room-temperature characteristics of AlN nanowires/ substrate. The inset shows the schematic diagram of the proposed AlN nanowires/ substrate heterojunction LED. (b) Room-temperature curves of two ITO contacts deposited on a layer of randomly packed AlN nanowires. The inset shows the corresponding measurement setup.
(a) Room-temperature EL spectra of the AlN nanowires/ heterojunction. (b) Fitting results of the EL spectrum obtained from the LED at forward biased voltage of 15 V. (c) Fitting results of the PL spectrum of the AlN nanowires deposited on .
Energy band diagrams for the AlN nanowires/ heterojunction under (a) equilibrium, (b) forward bias, and (c) reverse bias. represents the energy levels of the four trap-level states.
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