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Electroluminescence from AlN nanowires grown on substrate
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10.1063/1.3513308
/content/aip/journal/apl/97/19/10.1063/1.3513308
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3513308
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) A typical SEM image of the randomly packed AlN nanowires. (b) A magnified SEM image of a single AlN nanowire. (c) Cross-section SEM image of interface between AlN nanowires and SiC substrate. (d) A HRTEM image of the AlN nanowire and the SAED pattern.

Image of FIG. 2.
FIG. 2.

(a) Room-temperature characteristics of AlN nanowires/ substrate. The inset shows the schematic diagram of the proposed AlN nanowires/ substrate heterojunction LED. (b) Room-temperature curves of two ITO contacts deposited on a layer of randomly packed AlN nanowires. The inset shows the corresponding measurement setup.

Image of FIG. 3.
FIG. 3.

(a) Room-temperature EL spectra of the AlN nanowires/ heterojunction. (b) Fitting results of the EL spectrum obtained from the LED at forward biased voltage of 15 V. (c) Fitting results of the PL spectrum of the AlN nanowires deposited on .

Image of FIG. 4.
FIG. 4.

Energy band diagrams for the AlN nanowires/ heterojunction under (a) equilibrium, (b) forward bias, and (c) reverse bias. represents the energy levels of the four trap-level states.

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/content/aip/journal/apl/97/19/10.1063/1.3513308
2010-11-08
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electroluminescence from AlN nanowires grown on p-SiC substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3513308
10.1063/1.3513308
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