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AFM image (signal amplitudes) of the top surface of the QD structure grown at low . (a) scan area shows a large number of square defects. (b) and (c) depict zoom-in on the defects.
Dependence of the surface defect density on the QD growth temperature. The insets show AFM scans for selected values of with circles indicating the position of the surface defects.
Dependence of the PL spectrum on the growth temperature of the QDs. Dots represent the maximum of the ground state emission. The inset shows dependence of the FWHM on the QD growth temperature.
(a) 220 bright field TEM micrograph of the PL structure grown at . (b) Zoom-in on the SF depicting a big QD as a source of the defect. Small interference patterns correspond to normal dots. (c) Schematic of the origin of the surface square defects and method of calculation of the SF origin depth.
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