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Quantum efficiency spectra of four single element dies across the wafer at 77 K and 50 mV reverse bias reflects the uniformity of growth and shows the 50% cutoff wavelength at .
(a) Cross-sectional scanning electron micrograph of the etched trench between two pixels shows conformal coverage of vertical sidewalls with PECVD for passivation and a fill factor of 72.6%, (b) oblique angled scanning electron micrograph of FPA pixels with uniform indium bumps, and (c) digital image of the FPA mounted on a 124-pin LCCC.
Pictures of a student taken with the FPA at (a) 81 K and (b) 68 K.
NEDT histograms at 81 K (solid bars) and 68 K (open bars). Inset shows the NEDT variation with bias at both temperatures.
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