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Light-induced instability of an InGaZnO thin film transistor with and without passivation layer formed by plasma-enhanced-chemical-vapor-deposition
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10.1063/1.3514251
/content/aip/journal/apl/97/19/10.1063/1.3514251
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3514251
/content/aip/journal/apl/97/19/10.1063/1.3514251
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/content/aip/journal/apl/97/19/10.1063/1.3514251
2010-11-08
2014-09-03
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3514251
10.1063/1.3514251
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