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Transfer characteristics of a-IGZO TFTs with and without passivation layer formed by PECVD, measured in vacuum with forward [, ] and reverse [, ] sweep.
Transfer I-V characteristics in vacuum measured with a sequence process of dark state, instant light illumination, and light illumination for 1000 s for (a) the unpassivated device and (b) the passivated device.
(a) The illuminated time dependence of shift for unpassivated device and passivated device under vacuum and ambiance; the is defined as . The insert shows the transfer I-V characteristics in the dark for unpassivated and passivated devices under vacuum and ambiance for 1000 s. (b) Dark recovery characteristics for unpassivated device under vacuum and ambiance following 1000 s light illumination in vacuum; the is defined as . The insert shows the corresponding dark recovery transfer I-V curve for 30 000 s.
Schematic diagram of proposed desorption and readsorption mechanism under light illumination in ambiance.
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