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Light-induced instability of an InGaZnO thin film transistor with and without passivation layer formed by plasma-enhanced-chemical-vapor-deposition
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10.1063/1.3514251
/content/aip/journal/apl/97/19/10.1063/1.3514251
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3514251
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transfer characteristics of a-IGZO TFTs with and without passivation layer formed by PECVD, measured in vacuum with forward [, ] and reverse [, ] sweep.

Image of FIG. 2.
FIG. 2.

Transfer I-V characteristics in vacuum measured with a sequence process of dark state, instant light illumination, and light illumination for 1000 s for (a) the unpassivated device and (b) the passivated device.

Image of FIG. 3.
FIG. 3.

(a) The illuminated time dependence of shift for unpassivated device and passivated device under vacuum and ambiance; the is defined as . The insert shows the transfer I-V characteristics in the dark for unpassivated and passivated devices under vacuum and ambiance for 1000 s. (b) Dark recovery characteristics for unpassivated device under vacuum and ambiance following 1000 s light illumination in vacuum; the is defined as . The insert shows the corresponding dark recovery transfer I-V curve for 30 000 s.

Image of FIG. 4.
FIG. 4.

Schematic diagram of proposed desorption and readsorption mechanism under light illumination in ambiance.

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/content/aip/journal/apl/97/19/10.1063/1.3514251
2010-11-08
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3514251
10.1063/1.3514251
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