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High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy
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10.1063/1.3514580
/content/aip/journal/apl/97/19/10.1063/1.3514580
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3514580
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RHEED patterns for (a) and (b) . (c) A cross-sectional TEM image of the interface fabricated at .

Image of FIG. 2.
FIG. 2.

Room temperature saturation magnetic moment as a function , where is the composition of Fe in . Here, the open circles are data of bulk samples reported by Bardos (Ref. 18).

Image of FIG. 3.
FIG. 3.

(a) A representative characteristic of the diode at room temperature. The left and right insets show the Arrhenius plot of the temperature-dependent characteristics and the schematic illustration of the fabricated diode, respectively. The solid curve shows the fitting result using the TE theory. (b) SBH vs metal work function for metal/ junctions.

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/content/aip/journal/apl/97/19/10.1063/1.3514580
2010-11-08
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3514580
10.1063/1.3514580
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