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A route to strong -doping of epitaxial graphene on SiC
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/content/aip/journal/apl/97/19/10.1063/1.3515848
2010-11-09
2014-07-11

Abstract

The effects of Au intercalation on the electronic properties of epitaxialgraphenegrown on SiC{0001} substrates are studied using first principles calculations. A graphenemonolayer on SiC{0001} restores the shape of the pristine graphene dispersion, where doping levels between strongly -doped and weakly -doped can be achieved by altering the Au coverage. We predict that Au intercalation between the two C layers of bilayer graphenegrown on SiC{0001} makes it possible to achieve a strongly -doped graphene state, where the -doping level can be controlled by means of the Au coverage.

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Scitation: A route to strong p-doping of epitaxial graphene on SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3515848
10.1063/1.3515848
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