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Effects of lattice strains on the interfacial potential in heterojunctions
5.F. M. Postma, R. Ramaneti, T. Banerjee, H. Gokcan, E. Haq, D. H. A. Blank, R. Jansen, and J. C. Lodder, J. Appl. Phys. 95, 7324 (2004).
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13.C. M. Xiong, J. R. Sun, D. J. Wang, and B. G. Shen, Acta Phys. Sin. 53, 3909 (2004).
16.The resistivity dependence on the thickness of LCMO films is studied. As the thickness of the film was decreased, the resistivity increased and the 11-nm-thick LCMO film showed a semiconducting behavior, which is about at room temperature, much larger than that of 300-nm-thick LCMO , and increases rapidly with the decrement of temperature. According to the work of Liang (Ref. 17), the thickness of the magnetic and conductive dead layer is . When the film thickness is thinner than 10 nm, the carrier concentration could be very low. So it is reasonable to postulate that the carriers in LCMO of 11 nm are almost localized.
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