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Doping effects of Sb and Pb in epitaxial topological insulator thin films: An in situ angle-resolved photoemission spectroscopy study
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10.1063/1.3516160
/content/aip/journal/apl/97/19/10.1063/1.3516160
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3516160
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Figures

Image of FIG. 1.
FIG. 1.

RHEED patterns of (a) 20QL film, (b) film, (c) and film grown on bilayer-graphene-terminated 6H-SiC(0001) by MBE. (d) STM image of 20 QL film with bias of and tunneling current of 0.02 nA.

Image of FIG. 2.
FIG. 2.

Second-order differential ARPES spectra of 20 QL films along direction: (a) bare film, (b) film, (c) film, and (d) film. The solid lines indicate the tops of VBs. The dashed lines indicate the Dirac-cone-like SSs. The Fermi level is indicated by the dotted line.

Image of FIG. 3.
FIG. 3.

The dependences of the Dirac point positions of (a) 20 QL film, (b) 20 QL film [the data points below in (b)] and 20 QL film [the data points above in (b)] on Sb/Pb concentration x/y. The coordinate of Pb concentration y in (b) is logarithmic. The Fermi level is indicated by the dotted lines.

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/content/aip/journal/apl/97/19/10.1063/1.3516160
2010-11-11
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Doping effects of Sb and Pb in epitaxial topological insulator Bi2Se3 thin films: An in situ angle-resolved photoemission spectroscopy study
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3516160
10.1063/1.3516160
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