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Ultralow contact resistance in electrolyte-gated organic thin film transistors
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/content/aip/journal/apl/97/19/10.1063/1.3518075
2010-11-12
2014-10-24

Abstract

We show that the parasitic contact resistance in staggered organic thin film transistors employing a solid electrolyte as the gate dielectric is around , two orders of magnitude lower than in conventional devices. Moreover, this parameter is only weakly dependent on the thickness of the semiconductor and on the nature of the metal/semiconductor pair. This unique feature of an electrolyte-gated transistor results from the electrochemical doping of the active layer occurring under the influence of the applied gate bias.

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Scitation: Ultralow contact resistance in electrolyte-gated organic thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/19/10.1063/1.3518075
10.1063/1.3518075
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