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Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation
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10.1063/1.3459959
/content/aip/journal/apl/97/2/10.1063/1.3459959
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/2/10.1063/1.3459959
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross sectional view of the layer obtained by ion implantation. (a) As-implanted, (b) after laser irradiation at the edge of the laser scan, and (c) after laser irradiation in the middle of the laser scan.

Image of FIG. 2.
FIG. 2.

(a) Temperature profile reached by in the middle of the laser scan by thermal field evolution simulation, and (b) nucleation rate of crystalline grains in (full line) and crystalline volume fraction (dashed line) during the temperature profile in Fig. 1.

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/content/aip/journal/apl/97/2/10.1063/1.3459959
2010-07-15
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/2/10.1063/1.3459959
10.1063/1.3459959
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