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High-quality nanocrystalline cubic silicon carbide emitter for crystalline silicon heterojunction solar cells
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10.1063/1.3460917
/content/aip/journal/apl/97/2/10.1063/1.3460917
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/2/10.1063/1.3460917
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Figures

Image of FIG. 1.
FIG. 1.

(a) Deposition rate, (b) surface roughness, (c) effective lifetime, and (d) crystalline fraction of nc-3C–SiC:H deposited at different MMS flow rates. The deposition rate, surface roughness, and crystalline fraction are the average values of nine measurement points on a sample. Error bars indicate the standard deviation of the data.

Image of FIG. 2.
FIG. 2.

Silicon, carbon, oxygen, and hydrogen depth profiles of a sample deposited using the two-step method measured by RBS and ERDA.

Image of FIG. 3.
FIG. 3.

Dependence of Auger-corrected inverse effective lifetime on minority carrier density for c-Si substrates with an nc-3C–SiC:H emitter on both sides. The emitter was deposited using two-step method; its thickness is about 17 nm.

Image of FIG. 4.
FIG. 4.

Illuminated characteristics and QE of a Si heterojunction solar cell with an n-type nc-3C–SiC:H emitter. The solar cell was annealed at in forming gas (1% in ) for 1 min.

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/content/aip/journal/apl/97/2/10.1063/1.3460917
2010-07-12
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-quality nanocrystalline cubic silicon carbide emitter for crystalline silicon heterojunction solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/2/10.1063/1.3460917
10.1063/1.3460917
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