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(a) Deposition rate, (b) surface roughness, (c) effective lifetime, and (d) crystalline fraction of nc-3C–SiC:H deposited at different MMS flow rates. The deposition rate, surface roughness, and crystalline fraction are the average values of nine measurement points on a sample. Error bars indicate the standard deviation of the data.
Silicon, carbon, oxygen, and hydrogen depth profiles of a sample deposited using the two-step method measured by RBS and ERDA.
Dependence of Auger-corrected inverse effective lifetime on minority carrier density for c-Si substrates with an nc-3C–SiC:H emitter on both sides. The emitter was deposited using two-step method; its thickness is about 17 nm.
Illuminated characteristics and QE of a Si heterojunction solar cell with an n-type nc-3C–SiC:H emitter. The solar cell was annealed at in forming gas (1% in ) for 1 min.
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