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Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells
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Image of FIG. 1.
FIG. 1.

PL spectra measured at 4.2 K on different samples at pump power of 6 mW at 235 nm. The signals for sample nos. 3 and 4 are both multiplied by 20 for clarity.

Image of FIG. 2.
FIG. 2.

Typical band diagram of sample no. 1, calculated using NEXTNANO3 eight-band- Schrödinger–Poisson solver.

Image of FIG. 3.
FIG. 3.

(a) Integrated PL intensities for two transition peaks of sample no. 1 vs temperature under pump power of 1.5 mW at 235 nm. Dots and the squares correspond to data and for and , respectively; (b) ratio of PL intensities determined from Fig. 2(a) vs temperature; and (c) transition energies of two PL peaks vs temperature.


Generic image for table
Table I.

Characteristics for four samples are summarized. and , stands for thicknesses of AlN and GaN layers, respectively; stands for lower-energy transition peak (or the only peak) of asymmetric-coupled (or single) QWs, whereas stands for higher-energy transition peak; and are integrated intensities of lower- and higher-energy transition peaks, respectively; FWHM is full width at half maximum; and R stands for ratio between PL intensities of the higher- and lower-energy transition peaks.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence emission in deep ultraviolet region from GaN/AlN asymmetric-coupled quantum wells