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Nanostructure band engineering of gadolinium oxide nanocrystal memory by plasma treatment
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10.1063/1.3462929
/content/aip/journal/apl/97/2/10.1063/1.3462929
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/2/10.1063/1.3462929
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Figures

Image of FIG. 1.
FIG. 1.

(a) The XPS depth profile of the memory with plasma treatment and analyzed from the film surface. (b) The XPS analysis of the memories with and without plasma treatment. The HRTEM images of memories are shown in the inset.

Image of FIG. 2.
FIG. 2.

Energy band diagrams of the memories (a) without and (b) with plasma treatment, which is speculated from the fluorine XPS analysis.

Image of FIG. 3.
FIG. 3.

P/E speed of the memories with plasma treatment and postplasma annealing (PPA). The program and erase voltages are 12 V and −13 V, respectively. The C–V curves measured at 12 V/1 ms programming and −1 3 V/1 s erasing are shown in the inset. All the C–V curves of -axis are normalized by subtracting , the flat-band voltage of the fresh sample. The improved P/E characteristics by plasma treatment can be explained by built-in E1 and E2, respectively, as shown in the inset band diagrams.

Image of FIG. 4.
FIG. 4.

Charge retention characteristics of memories with plasma treatment and PPA at room temperature. The charge loss rate was fitted by two straight lines and shown in the inset.

Image of FIG. 5.
FIG. 5.

Endurance characteristics of memories with plasma treatment and PPA. The samples were programmed at 12 V for 1 ms and erased at −13 V for 1 s. Early cycling failure was observed for sample C due to the plasma damage. Sample D can sustain the memory window for over 3.4 V after cycling.

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/content/aip/journal/apl/97/2/10.1063/1.3462929
2010-07-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanostructure band engineering of gadolinium oxide nanocrystal memory by CF4 plasma treatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/2/10.1063/1.3462929
10.1063/1.3462929
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