banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

Data sets for two representative devices that underwent COD at low current [upper panels (a)–(e)] and at elevated current [panels (f)–(j)]. [(a), (b), (f), and (g)] Spatial distribution of laser emission at the front facet (optical nearfield) along the lateral facet dimension measured with a spatial resolution of for injection currents of [(a), (b), (f), and (g)] 0.5 A. The panels (b) and (c) and (g) and (h) were recorded after COD. [(c) and (h)] Microscope images of the front facets acquired after COD showing the dark damaged regions. [(d) and (i)] Spatial profiles of the emitted thermal power (solid lines and symbols) derived from Fig. 2 (right panel) and damage size as derived from Figs. 1(c) and 1(h). [(e) and (j)] Spatial profiles of emitted laser power before (black lines) and after COD (blue lines).

Image of FIG. 2.
FIG. 2.

[(a)–(d)] Current and emission power transients from four devices: diode laser current (black lines) and optical output power (red lines) as a function of time. The onset of COD (at time ) is marked by arrows. The right panel shows the corresponding thermal images recorded during the current pulse. Estimated maximal temperatures of the thermal flashes are included.

Image of FIG. 3.
FIG. 3.

(a) COD diagram showing the regions of COD (filled circles) and no COD (open circles) occurrence. The occurrence of COD was derived from an analysis of thermal images such as displayed in Fig. 2 (right panel). The borderline (colored gray) is blurred because of the randomness in filamentation and scatter in device properties. The dashed line represents the “square-root law” that has been originally discovered for devices with smaller emission powers (Refs. 1 and 11). (b) Absorbed output energy calculated from the experimental transients vs damaged area on the front facet (symbols). The solid line is to guide the eye. (c) Absorbed output energy as a function of the calculated thermal energy required to heat the damaged device volume to the melting point (symbols).


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage