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ZnO single nanowire-based UV detectors
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10.1063/1.3464287
/content/aip/journal/apl/97/2/10.1063/1.3464287
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/2/10.1063/1.3464287
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) FESEM image of ZnO NWs grown on -plane sapphire. The inset shows the SEM image of the NW device. (b) PL spectrum (10 K) of dispersed NWs. (c) characteristics for a representative Au/ZnO NW Schottky diode before and after UV illumination. The inset shows the characteristics of a device with Ohmic contacts on both sides. (d) Plot of with applied voltage for Au/ZnO NW Schottky diode. The inset shows the density of interface states as a function of interface state energy .

Image of FIG. 2.
FIG. 2.

UV response behaviors of devices with (a) Ohmic contacts on both sides and (b) Schottky contact on one side.

Image of FIG. 3.
FIG. 3.

Energy-level diagram of (a) a ZnO NW surface and (b) an Au/ZnO NW interface.

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/content/aip/journal/apl/97/2/10.1063/1.3464287
2010-07-13
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: ZnO single nanowire-based UV detectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/2/10.1063/1.3464287
10.1063/1.3464287
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