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Band structure engineering of alloys
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10.1063/1.3464323
/content/aip/journal/apl/97/2/10.1063/1.3464323
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/2/10.1063/1.3464323
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD peaks of 5 films with x ranging from 0 to 0.097. The addition of the large Se atom shifts the peak to the left, as is expected from the increase in d spacing. The inset shows a broad range of for the 3.3% sample grown on sapphire.

Image of FIG. 2.
FIG. 2.

Measured absorption data for five films (symbols) and theoretical fits based on the VBAC model. Additional films were measured and fit but are not shown here to maintain clarity. The coupling constant, C, is 1.2 eV and the value of is 0.9 eV above the valence band. Oscillations below the band edge result from Fabry-Perot interference. The inset shows the total absorption for the 4.6% Se sample separated into the absorption contributions from each band.

Image of FIG. 3.
FIG. 3.

Band gap as a function of composition for the system as calculated from the BAC model (blue solid line), while the inset shows the calculated band edges. The red circles were extracted linearly from absorption data in this work while the orange squares are from Ref. 13. X errors bars result from XRD resolution of the sapphire 006 peak and y error bars result from any curvature at low . The abrupt reduction in the band gap at low Se contents is associated with the appearance of the Se derived band at energy higher 0.9 eV above the valence band.

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/content/aip/journal/apl/97/2/10.1063/1.3464323
2010-07-13
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band structure engineering of ZnO1−xSex alloys
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/2/10.1063/1.3464323
10.1063/1.3464323
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