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Femtosecond laser-ultrasonic investigation of plasmonic fields on the metal/gallium nitride interface
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Simulated surface plasmon field distribution on the plane with a grid size of 2 nm. (b) The integrated plasmon field intensity along the -direction. The at the GaN/metal interface was normalized to unity. Penetration depth is around 134 nm. (c) The schematic showing the experimental principle. The SPR was excited in the metal/substrate interface with the specific probe pulse and the nanoacoustic pulse was generated in the GaN thin film by the illuminated pump pulse. (d) The SEM top view of the fabricated metallic nanoslit arrays on GaN.

Image of FIG. 2.
FIG. 2.

(a) Measured probe transmission change as a function of time delay. The inset illustrates the locations of the nanoacoustic pulse at specific timing. 1, 2, and 3, correspond to the arrival of the nanoacoustic pulse on GaN/metal, metal/air, and metal/GaN interface, respectively. (b) Amplified trace between after removing the electronic background. The dashed line showed the fitting curve.

Image of FIG. 3.
FIG. 3.

(a) The polarization dependency of the probe light to the signal magnitude. (b) The transient probe transmission change for different slit periods. The probe wavelength was kept at 720 nm with a TM polarization. The periods were 570 nm, 590 nm, 610 nm, 630 nm, and 650 nm, from bottom to top traces.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Femtosecond laser-ultrasonic investigation of plasmonic fields on the metal/gallium nitride interface