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Room temperature gate modulation of electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells
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10.1063/1.3514675
/content/aip/journal/apl/97/20/10.1063/1.3514675
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/20/10.1063/1.3514675
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic structure of (110) device.

Image of FIG. 2.
FIG. 2.

I-V characteristics of the fabricated device with and without illumination.

Image of FIG. 3.
FIG. 3.

PL peak energy shift as a function of applied bias voltage measured at RT. The inset shows PL spectra at applied bias voltages of 0 V and –20.4 V, whose peak energies, respectively, correspond to 1.452 eV and 1.448 eV.

Image of FIG. 4.
FIG. 4.

Time evolution of the degree of polarization measured utilizing polarization- and time-resolved PL measurements at applied bias voltages of 0 V, –14.8 V, and –20.4 V. are 4.0 ns, 1.1 ns, and 0.3 ns, respectively.

Image of FIG. 5.
FIG. 5.

as a function of applied bias voltage at RT.

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/content/aip/journal/apl/97/20/10.1063/1.3514675
2010-11-15
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room temperature gate modulation of electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/20/10.1063/1.3514675
10.1063/1.3514675
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