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Minimization of thin film contact resistance
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10.1063/1.3517497
/content/aip/journal/apl/97/20/10.1063/1.3517497
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/20/10.1063/1.3517497
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Thin film structures in either Cartesian or cylindrical geometries. Terminals E and F are held at a constant voltage relative to terminal GH, which is grounded. The vertical dash-dot line is the axis of rotation for the cylindrical geometry.

Image of FIG. 2.
FIG. 2.

as a function of , for the Cartesian structure in Fig. 1. The solid line represents the conformal mapping results [Eq. (2)], the dashed lines represent the asymptotes [Eq. (3)], and the symbols represents the Fourier series representation calculation.

Image of FIG. 3.
FIG. 3.

as a function of , for the cylindrical structure in Fig. 1. The theoretical result (line) [Eq. (5)] is compared to MAXWELL 3D simulation (symbols). In the simulation, we set , , ranging from 0.01 to 4 mm with fixed , and ranging from 0.1 to 20 mm with fixed , and a terminal voltage was applied.

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/content/aip/journal/apl/97/20/10.1063/1.3517497
2010-11-19
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Minimization of thin film contact resistance
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/20/10.1063/1.3517497
10.1063/1.3517497
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