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Photon energy threshold for filling boron induced charge traps in near the interface using second harmonic generation
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10.1063/1.3518070
/content/aip/journal/apl/97/20/10.1063/1.3518070
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/20/10.1063/1.3518070
/content/aip/journal/apl/97/20/10.1063/1.3518070
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/content/aip/journal/apl/97/20/10.1063/1.3518070
2010-11-17
2014-07-10
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scitation|Photon energy threshold for filling boron induced charge traps in SiO2 near the Si/SiO2 interface using second harmonic generation
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/20/10.1063/1.3518070
10.1063/1.3518070
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