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Photon energy threshold for filling boron induced charge traps in near the interface using second harmonic generation
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10.1063/1.3518070
/content/aip/journal/apl/97/20/10.1063/1.3518070
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/20/10.1063/1.3518070
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Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the experimental configuration. S1 and S2 represent beam shutters. Inset (a): a typical TD-SHG result in Sb-doped Si with a native oxide layer (resistivity of ); inset (b): a typical TD-SHG result in boron-doped Si with a native oxide layer (resistivity of ). The data of the insets were measured by the probe beam in fresh sample spots without irradiating the pump beam.

Image of FIG. 2.
FIG. 2.

(a) Schematic band diagram showing three possible mechanisms (I, II, and III) for filling boron charge traps. [(b) and (c)] TD-SHG measurements after irradiating the samples with 350 nm (3.54 eV) and 700 nm (1.77 eV) pump lights. Initially, the probe beams were blocked for the first 10 s. (d) Relative comparison of with respect to the photon energy of the OPA pump beam showing a marked energy threshold.

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/content/aip/journal/apl/97/20/10.1063/1.3518070
2010-11-17
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photon energy threshold for filling boron induced charge traps in SiO2 near the Si/SiO2 interface using second harmonic generation
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/20/10.1063/1.3518070
10.1063/1.3518070
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