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Impact of surfaces on the optical properties of GaAs nanowires
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) AFM mapping of uncapped NWs transferred to a SiO2 substrate. (b) and (c) Mapping of integrated 4.2 K signal of uncapped and capped NWs. The measurements (a) and (b) are performed on the same area of the sample. (d) Integrated PL signal along the length of capped (red circles) and uncapped NWs (black squares), the white arrows of (b) and (c) indicate the studied NWs and the direction of the scan. The curves are normalized to the maximum intensity of capped NWs.

Image of FIG. 2.
FIG. 2.

(a) SEM image of a single tapered capped NW. (b) TRPL spectra corresponding to the both extremities. For thinner radii, carrier lifetimes is shorter. (c) The inverse lifetime is reported as a function of the inverse radii for three different NWs.

Image of FIG. 3.
FIG. 3.

Comparison of the theoretical diameter dependences of PL intensity per unit volume (solid curves). The geometrical effect resulting from a reduction in NW volume is already separated off. The curves correspond to the case of pure volume recombinations (black), pure surface recombinations (green) and to the case of surface band bending with volume recombinations (red). We added experimental data corresponding to passivated and unpassivated NWs. Data are normalized to the intensity of a NW diameter of 200 nm. The inset is a schematic view of the depletion shell induced by a surface charge traps.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of surfaces on the optical properties of GaAs nanowires