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(a) Retrieved imaginary part of permittivity of Ge. (b) Retrieved of SFs with different thicknesses on 1 nm Ge wetting layers before and after annealing. (c) Retrieved of SFs before and after annealing in the 400–600 nm wavelength range.
TEM images of 10 nm SFs (a) without Ge, (b) with 1 nm Ge, and (c) with 1 nm Ge and after annealing at for 3 min. AFM topographs of 10 nm SFs (d) without Ge, (e) with 1 nm Ge, and (f) with 1 nm Ge and after annealing at for 3 min.
(a) Experimentally retrieved damping rate curves and (b) Measured resistivity of SFs at different thicknesses on a 1 nm Ge layer after annealing at different temperatures for 3 minutes. (c) Linear relation between the and in the SFs.
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