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(a) Plan-view SEM image, (b) enlarged-view SEM image (10° tilted), and (c) AFM image (tapping mode) of a nanowire. The nanowire is .
(a) Comparison of resistive transition curves between the nanowire and 10 nm thick bulk film. (b) characteristics of the nanowire at 3 K. The inset shows the temperature dependence of .
Bias current dependence of number of detection signals vs average number of photons for the nanowire at (a) 405 and (b) 1560 nm wavelength. The lines show slope exponent , 2, and 3, corresponding to single-photon detection, two-photon detection, and three-photon detection, respectively.
Bias current dependence of number of detection signals vs average number of photons for the nanowire at (a) 405, (b) 633, and (c) 1560 nm. (d) Transient photoresponse of the nanowire at and at 1560 nm. The inset shows the latchinglike behavior at .
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