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Scheme of the proposed structure, made of a 50 nm GaSb layer over a silver substrate, with a sawtooth, 900 nm thick, one-dimensional, SiC grating at the top. The structure has a period along and does not change in the direction perpendicular to the plane, with the direction normal to the substrate. An incoming plane wave with wave vector makes an angle with respect to the axis, and the azimuthal angle is noted . For the calculation, the structure is decomposed into ten layers of identical thickness that do not vary along .
Average absorption in the GaSb layer for the proposed structure as a function of numerical aperture, according to Eq. (1), for both and polarizations and after averaging both polarizations .
(a) Fraction of the incident power absorbed in the GaSb layer of the proposed structure as a function of wavelength and angle for and -polarization . (b) Same quantity for a thinner SiC grating (100 nm).
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