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Compensation mechanism in silicon-doped gallium arsenide nanowires
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10.1063/1.3517254
/content/aip/journal/apl/97/22/10.1063/1.3517254
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/22/10.1063/1.3517254
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic drawing of the incorporation of silicon in the nanowire: on the side facets through radial growth and in the core through the droplet. (b) Raman spectra of the Si-doped GaAs nanowires for different Si concentrations in the shell.

Image of FIG. 2.
FIG. 2.

(a) Integrated intensity of the normalized mode as a function of the incident Si-flux. (b) Intensity ratio between the and LVMs as a function of the Si-flux.

Image of FIG. 3.
FIG. 3.

Calculated Debye screening length as a function of the effective free carrier concentration (full line) and the average Si–Si distance for the total Si concentrations of , , , and . The arrows indicate the minimum carrier concentration for each of the silicon concentrations.

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/content/aip/journal/apl/97/22/10.1063/1.3517254
2010-11-30
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Compensation mechanism in silicon-doped gallium arsenide nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/22/10.1063/1.3517254
10.1063/1.3517254
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