1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Indirect excitation of ions in silicon nitride films prepared by reactive evaporation
Rent:
Rent this article for
USD
10.1063/1.3521279
/content/aip/journal/apl/97/22/10.1063/1.3521279
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/22/10.1063/1.3521279
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Infrared absorption spectra and (b) Raman shift for different annealing temperatures.

Image of FIG. 2.
FIG. 2.

Dark field views of samples annealed at (a) (a) and at (b) .

Image of FIG. 3.
FIG. 3.

Photoluminescence excitation spectra at for samples annealed at 700 and .

Image of FIG. 4.
FIG. 4.

Influence of the annealing temperatures on the PL spectra for excitation at (a) 325 nm and (b) 488 nm. (c) Decay time for the different annealing temperatures. (d) Dependence of the ratio with the annealing temperature for excitation wavelengths equal to 325 nm (◼) or 488 nm (●).

Loading

Article metrics loading...

/content/aip/journal/apl/97/22/10.1063/1.3521279
2010-11-29
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Indirect excitation of Er3+ ions in silicon nitride films prepared by reactive evaporation
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/22/10.1063/1.3521279
10.1063/1.3521279
SEARCH_EXPAND_ITEM