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Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism
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10.1063/1.3521280
/content/aip/journal/apl/97/22/10.1063/1.3521280
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/22/10.1063/1.3521280
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) PL spectra of films produced at various flow rate ratios , ranging from 8 /100 to 2 /100. (b) PL spectra of a film produced with and excited at 405 nm (3.06 eV) and 488 nm (2.54 eV) (with a constant laser power of 18 mW). The inset illustrates the proposed excitation-transfer process.

Image of FIG. 2.
FIG. 2.

Evolution of the PL emission and the absorption spectra of a film, produced with , as a function of the annealing temperature in a atmosphere for 1 h.

Image of FIG. 3.
FIG. 3.

Effect of the annealing temperature, in hydrogen atmosphere, on the IR spectra. The inset shows the exodiffusion spectrum of the as-deposited sample.

Image of FIG. 4.
FIG. 4.

PL spectra evolution of the as-deposited sample as a function of the ambient annealing time at .

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/content/aip/journal/apl/97/22/10.1063/1.3521280
2010-12-03
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/22/10.1063/1.3521280
10.1063/1.3521280
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