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p-n junctions on Ga-face GaN grown by molecular beam epitaxy with low ideality factors and low reverse currents
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10.1063/1.3521388
/content/aip/journal/apl/97/22/10.1063/1.3521388
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/22/10.1063/1.3521388
/content/aip/journal/apl/97/22/10.1063/1.3521388
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/content/aip/journal/apl/97/22/10.1063/1.3521388
2010-12-01
2014-12-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/22/10.1063/1.3521388
10.1063/1.3521388
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