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Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition
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10.1063/1.3522889
/content/aip/journal/apl/97/22/10.1063/1.3522889
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/22/10.1063/1.3522889
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Figures

Image of FIG. 1.
FIG. 1.

(a) AFM images of surface QDashes with various InAsSb thickness. (b) Raman spectra of QDash samples with various InAsSb thicknesses measured under the configuration. (c) 77 K PL spectra of the WLs for QDashes with various InAsSb thicknesses and (d) calculated confinement induced phonon frequency shift of QDashes with various dash heights. The inset of (d) shows the calculated confinement induced phonon frequency shift and estimated average compressive strain in the 2, 4, 5, and 6 ML InAsSb QDashes.

Image of FIG. 2.
FIG. 2.

(a) AFM images of 4 ML surface and QDashes. (b) Raman spectra of 4ML , , and QDash samples measured under the configuration.

Image of FIG. 3.
FIG. 3.

(a) Calculated confinement induced phonon frequency shift and estimated average compressive strain in 4 ML , , and QDashes. (b) polarized Raman spectra of 4ML QDash sample.

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/content/aip/journal/apl/97/22/10.1063/1.3522889
2010-12-02
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/22/10.1063/1.3522889
10.1063/1.3522889
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