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Ultrathin interlayer formed by in situ plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices
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10.1063/1.3524208
/content/aip/journal/apl/97/22/10.1063/1.3524208
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/22/10.1063/1.3524208
/content/aip/journal/apl/97/22/10.1063/1.3524208
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/content/aip/journal/apl/97/22/10.1063/1.3524208
2010-12-01
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrathin GeOxNy interlayer formed by in situNH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/22/10.1063/1.3524208
10.1063/1.3524208
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