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Ultrathin interlayer formed by in situ plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices
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10.1063/1.3524208
/content/aip/journal/apl/97/22/10.1063/1.3524208
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/22/10.1063/1.3524208
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Figures

Image of FIG. 1.
FIG. 1.

(a) XPS spectra for the sample. The lines are added for showing the relative peak positions of and , respectively. (b) XPS spectra at the interface. Two components were extracted: Ge and .

Image of FIG. 2.
FIG. 2.

Gate leakage characteristics of the Pt-gated MOSCAPs with gate stacks.

Image of FIG. 3.
FIG. 3.

Comparison of at with respect to different EOTs according to the published data and this work.

Image of FIG. 4.
FIG. 4.

characteristics of the MOSCAP with gate stacks on (a) p-Ge(100) and (b) n-Ge(100).

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/content/aip/journal/apl/97/22/10.1063/1.3524208
2010-12-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrathin GeOxNy interlayer formed by in situNH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/22/10.1063/1.3524208
10.1063/1.3524208
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