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(a) XPS spectra for the sample. The lines are added for showing the relative peak positions of and , respectively. (b) XPS spectra at the interface. Two components were extracted: Ge and .
Gate leakage characteristics of the Pt-gated MOSCAPs with gate stacks.
Comparison of at with respect to different EOTs according to the published data and this work.
characteristics of the MOSCAP with gate stacks on (a) p-Ge(100) and (b) n-Ge(100).
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