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PL spectra at 5 K for InAs/AlInGaAs QDash test structures. Inset: SEM image of the uncapped 4 ML QDashes.
(a) Initial design for the InAs QDash cascade structure. (b) Normalized electroluminescence signal for various devices. At 80 kV/cm: black, EL from the control structure without QDashes; red, EL from the 4ML QDash cascade structure; green, EL from the 6 ML QDash cascade structure. At 170 kV/cm: dotted green line, EL from the 6ML QDash cascade structure. Shaded region: cutoff of the detector. Inset: comparison between the one-period (solid line) and the ten-period (dashed line) EL from the 4 ML QDash structures at 80 kV/cm.
EL orientation and polarization dependence for the ten-period QDash cascade structure. Inset: example of multiple Gaussian and Lorentzian fits (gray) for one of the EL spectra (black). The dashed gray line is the summation of all the fits.
(a) Modified design of the InAs QDash cascade structure. (b) 10 K EL at increasing bias for a ten-period structure based on this design.
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