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[(a)–(c)] Process sequence for fabricating arrays of microchannel plasma devices. Ultraviolet ink serves as the mask for the nanopowder blasting step (not shown) responsible for etching the microcavities; (d) end-on cross-section of a single microchannel device.
SEMs illustrating the cross-sections for: (a) a single microchannel in depth and (b) a portion of a ten element array having a pitch of . The cross-section of the deep channel in (a) approximates a half-ellipse (indicated by the dashed curve) whereas the channel sidewalls in (b) are linear.
Representative optical micrographs, recorded with a telescope and a CCD camera, of microchannel arrays: (a) A portion of a ten element array of channel microplasmas operating in 700 Torr of Ne; (b) Six of the ten elements in an array of wide channels ; and (c) the array of (b) operating in one atmosphere of laboratory air. The length of the channels for all these arrays is 2.5 cm and the rms operating voltage for panels (a) and (b) was fixed at 636 V.
Comparison of the transverse emission intensity profile (lineout) for a single wide microchannel plasma (◻) with those for a microchannel of the same dimensions that is a member of a three element array having a pitch of (○) or 1 mm (△). The uncertainty in amplitude for each data point is smaller than the size of the associated symbol and the spatial resolution is . The continuous curve drawn through the and single channel data is a Gaussian with a full-width of , and the positions of the microcavity sidewalls are indicated by dashed vertical lines. Data for a array operating at 700 Torr Ne are also given (●).
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