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Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots
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10.1063/1.3515909
/content/aip/journal/apl/97/23/10.1063/1.3515909
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/23/10.1063/1.3515909
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Small-signal reflectivity spectrum of the whole QD sample (solid line), a bare DBR (dashed line), and the intensity spectrum of the probe laser pulse at QD ground state resonance at 1040 nm.

Image of FIG. 2.
FIG. 2.

(a) Electric field in free-space as a function of time of the THz pulse with peak field strength of 220 kV/cm. Inset: its amplitude frequency spectrum. (b) Solid line: of the probe signal at 1040 nm in the QD sample, under influence of the incident THz pulse from (a). Dashed line: absolute value of the electric field in the THz pulse from (a) experienced by the QDs. Inset: intensity spectrum of the optical probe signal with and without peak electric field of the THz signal from (a) on the QDs.

Image of FIG. 3.
FIG. 3.

(a) of the optical probe signal in the QD sample, under influence of the incident THz pulses with variable peak field strength. (b) Peak values of of the signals from (a), as a function of peak THz field on the QDs.

Image of FIG. 4.
FIG. 4.

of the optical probe signal in the QDs, provided by the multiple reflections of a single THz pulse in the QD sample. Inset: amplitude Fourier spectra of the isolated first modulation pulse around 0 ps (dashed line), and of the full multipulse sequence. Background: amplitude spectrum of a single THz pulse.

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/content/aip/journal/apl/97/23/10.1063/1.3515909
2010-12-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/23/10.1063/1.3515909
10.1063/1.3515909
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