Full text loading...
Internal loss of TiN films grown on sapphire, SiN and Si surfaces. The TiN on sapphire has the highest loss for both high and low powers. The loss in TiN on SiN and Si is about the same for high fields, but at low field the increased participation of the SiN results in higher loss. In all cases the loss saturates at low field, i.e., in the single photon limit. The inset shows the measured transmission, vs frequency for a TiN resonator in high field limit. The temperature for these data were in the range of 75–100 mK.
XRD scans of TiN films on sapphire, Si and SiN/Si at , and Si at . The (111)-TiN peak at is present on the sapphire substrate as well as for Si room temperature. The TiN grown at high temperature on Si and SiN both exhibit primarily (200)-TiN peak at around . The sharp peak at on high temperature TiN on Si is due to the XRD being performed on a patterned sample with exposed Si regions.
Auger spectra of the H:i-Si before and after the pre-deposition soak. The soak procedure consisted of the substrate being raised to , and the sputter gun being ramped up to the operational power in the working atmosphere of 3:2 Ar:. The inset shows a zoom onto the region of the Si(LMM) peak. The as-prepared substrate shows predominantly the clean Si 92 eV peak with about 0.2 nm of the SiO, at 78 eV. After the soak, a SiN peak is observed at 84 eV that corresponds to about 2 nm coverage. The small Ti and Ar peaks can be attributed to residual deposition around the shutter and implantation, respectively.
Article metrics loading...