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Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy
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10.1063/1.3518717
/content/aip/journal/apl/97/23/10.1063/1.3518717
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/23/10.1063/1.3518717

Figures

Image of FIG. 1.
FIG. 1.

2DEG Hall mobility and sheet carrier density of AlGaN/GaN HEMT structure as a function of the measurement temperature.

Image of FIG. 2.
FIG. 2.

Carrier density profile of AlGaN/GaN HEMT structure. The inset shows a sharper decrease of the capacitance indicating better carrier confinement.

Image of FIG. 3.
FIG. 3.

Typical XRD symmetric (002) scan for AlGaN/GaN HEMT structure. XRD (002) rocking curves of HEMT samples grown with different GaN buffer layer thickness values are compared in the inset.

Image of FIG. 4.
FIG. 4.

(a) The drain current vs drain-source voltage characteristics and (b) transfer characteristics of gate length AlGaN/GaN HEMT.

Tables

Generic image for table
Table I.

Electrical parameters and FWHM values of x-ray rocking curves as a function of GaN buffer layer thickness for AlGaN/GaN HEMT structures.

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/content/aip/journal/apl/97/23/10.1063/1.3518717
2010-12-10
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/23/10.1063/1.3518717
10.1063/1.3518717
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