Full text loading...
2DEG Hall mobility and sheet carrier density of AlGaN/GaN HEMT structure as a function of the measurement temperature.
Carrier density profile of AlGaN/GaN HEMT structure. The inset shows a sharper decrease of the capacitance indicating better carrier confinement.
Typical XRD symmetric (002) scan for AlGaN/GaN HEMT structure. XRD (002) rocking curves of HEMT samples grown with different GaN buffer layer thickness values are compared in the inset.
(a) The drain current vs drain-source voltage characteristics and (b) transfer characteristics of gate length AlGaN/GaN HEMT.
Electrical parameters and FWHM values of x-ray rocking curves as a function of GaN buffer layer thickness for AlGaN/GaN HEMT structures.
Article metrics loading...