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Reduced leakage current in Josephson tunnel junctions with codeposited barriers
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View: Figures


Image of FIG. 1.
FIG. 1.

RHEED (a) and AFM (c) from a 65 Å Al (111) film grown on Nb (110). Panels (b) and (d) show similar measurements made on a 200 Å thick Al layer. AFM scan areas are .

Image of FIG. 2.
FIG. 2.

Tunnel junction characteristics measured at 4.2 K for devices with differing Al layer thicknesses. Both had diffused oxide barriers, and the only substantial difference was the falloff width in the quasiparticle curve at the gap voltage.

Image of FIG. 3.
FIG. 3.

Fiske modes for a device with 15 Å of codeposited . Colors represent taken at 4.2 K with different applied fields in the range of 0–17 G. The reentrant shape of the subgap current leads to retrapping even when the critical current is nulled. The inset shows the modulation of with field strength.

Image of FIG. 4.
FIG. 4.

characteristics of three different junctions expanded to show the subgap current in greater detail: one with 15 Å of codeposited , one with 20 Å of codeposited , and one with a diffused barrier. The theoretical prediction is also shown. Current values have been scaled according to the devices’ normal-state resistances.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduced leakage current in Josephson tunnel junctions with codeposited barriers