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RHEED (a) and AFM (c) from a 65 Å Al (111) film grown on Nb (110). Panels (b) and (d) show similar measurements made on a 200 Å thick Al layer. AFM scan areas are .
Tunnel junction characteristics measured at 4.2 K for devices with differing Al layer thicknesses. Both had diffused oxide barriers, and the only substantial difference was the falloff width in the quasiparticle curve at the gap voltage.
Fiske modes for a device with 15 Å of codeposited . Colors represent taken at 4.2 K with different applied fields in the range of 0–17 G. The reentrant shape of the subgap current leads to retrapping even when the critical current is nulled. The inset shows the modulation of with field strength.
characteristics of three different junctions expanded to show the subgap current in greater detail: one with 15 Å of codeposited , one with 20 Å of codeposited , and one with a diffused barrier. The theoretical prediction is also shown. Current values have been scaled according to the devices’ normal-state resistances.
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