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Impact of strain on radio frequency characteristics of flexible microwave single-crystalline silicon nanomembrane p-intrinsic-n diodes on plastic substrates
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10.1063/1.3521409
/content/aip/journal/apl/97/23/10.1063/1.3521409
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/23/10.1063/1.3521409
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Figures

Image of FIG. 1.
FIG. 1.

(a) Optical image of finished PIN diodes on a bent PET substrate. (b) Optical-microscope image of a finished PIN diode. The diode area is . The center metal electrodes (labeled as “S” for “signal”) cover two strips of the transferred SiNM and the length of each strip is . The metal electrodes labeled as “G” are for grounding.

Image of FIG. 2.
FIG. 2.

rf characterizations under uniaxial mechanical bending. (a) Illustration of the mechanical bending direction for the PIN diode under bending test. The double arrows show the PIN direction of the diode. (b) Measurement setup for the bending tests of the rf diodes. (c) Measured S21 (insertion loss) and (d) S11 (return loss, S22 is similar to S11, therefore not shown) of PIN diode under on state with bias . (e) Measured S21 (isolation) and (f) S11 (return loss) under off state with bias . The PIN diode has an area of . The convex bending radii are 77.5, 38.5, 28.5, and 21, respectively. The corresponding tensile strains are 0.11%, 0.23%, 0.31%, and 0.42%, respectively.

Image of FIG. 3.
FIG. 3.

(a) rf strain equivalent circuit model for flexible microwave single-crystalline SiNM PIN diodes on plastic substrate. (b) Measured S21 (insertion loss) and (c) S11 (return loss) of the flexible microwave PIN diode (diode ) under on state (solid curves) with comparison of the calculated results using developed rf strain model (dashed curves). (d) Measured S21 (isolation) and (e) S11 (return loss) of the flexible microwave PIN diode under off state (solid curves), with comparison of the calculated results using developed rf strain model (dashed curves). The mechanical bending tensile strain is 0.42%, as an example. (f) Forward mode device parameters reduction (in percentage) dependence on tensile bending strains for the combined resistance and parasitic series inductance , respectively.

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/content/aip/journal/apl/97/23/10.1063/1.3521409
2010-12-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of strain on radio frequency characteristics of flexible microwave single-crystalline silicon nanomembrane p-intrinsic-n diodes on plastic substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/23/10.1063/1.3521409
10.1063/1.3521409
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