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High permittivity thin films prepared by a low temperature process
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10.1063/1.3524492
/content/aip/journal/apl/97/23/10.1063/1.3524492
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/23/10.1063/1.3524492
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical XRD scans of the thin film grown on substrate.

Image of FIG. 2.
FIG. 2.

Relative dielectric constant and loss tangent of the thin film as a function of applied dc bias voltage, measured at 100 kHz and 300 K. Note that the measured curves are perfectly repeatable for the two different bias-sweeping directions. The inset shows a fitted curve of the quadratic voltage dependence of capacitance.

Image of FIG. 3.
FIG. 3.

(a) Frequency dependence, measured at room temperature (300 K) but with different ac signal amplitudes and (b) temperature dependence, measured at 100 kHz, of the dielectric constant and loss tangent for the thin film.

Image of FIG. 4.
FIG. 4.

Variations of leakage current density with applied dc electric field for the thin film, measured at room temperature. The two insets show the leakage current behavior plotted with vs , in which the lines are fits for the FN tunneling mechanism.

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/content/aip/journal/apl/97/23/10.1063/1.3524492
2010-12-07
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High permittivity Bi24Fe2O39 thin films prepared by a low temperature process
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/23/10.1063/1.3524492
10.1063/1.3524492
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