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Typical XRD scans of the thin film grown on substrate.
Relative dielectric constant and loss tangent of the thin film as a function of applied dc bias voltage, measured at 100 kHz and 300 K. Note that the measured curves are perfectly repeatable for the two different bias-sweeping directions. The inset shows a fitted curve of the quadratic voltage dependence of capacitance.
(a) Frequency dependence, measured at room temperature (300 K) but with different ac signal amplitudes and (b) temperature dependence, measured at 100 kHz, of the dielectric constant and loss tangent for the thin film.
Variations of leakage current density with applied dc electric field for the thin film, measured at room temperature. The two insets show the leakage current behavior plotted with vs , in which the lines are fits for the FN tunneling mechanism.
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