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(a) Heterostructure of two terminal vertical spin valve for electrical spin injection and detection. Inset shows a HRTEM image of the heterostructure which indicates relatively defect free ferromagnet/semiconductor interfaces. (b) MR as a function of magnetic field (applied along the easy axis of MnAs ) for devices A and B.
Measured and calculated characteristics of a vertical spin valve with -doped GaAs channel: (a) measured peak MR is shown as a function of temperature and bias. The dashed line with the latter is a guide to the eye, (b) measured peak MR vs temperature for devices C and D; the dashed lines are guides to the eye, (c) calculated spin diffusion length and SR time as a function of temperature; solid lines are guides to the eye, and (d) HRTEM image of device C layers.
Energy band diagrams and electric field profile for different bias conditions and doping concentrations. Band diagrams for (a) (degenerately doped) and , (b) (nondegenerately doped) and , (c) and (low bias), and (d) and (high bias).
Parameters used in designing the various device heterostructures used in our experiment. Full heterostructure consists of substrate/MnAs/GaAs/AlAs/-GaAs/AlAs/GaAs/MnAs, while nonfull heterostructure consists of substrate/MnAs/GaAs/AlAs/-GaAs/AlAs/GaAs/TiAu.
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