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Characteristics of a high temperature vertical spin valve
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Image of FIG. 1.
FIG. 1.

(a) Heterostructure of two terminal vertical spin valve for electrical spin injection and detection. Inset shows a HRTEM image of the heterostructure which indicates relatively defect free ferromagnet/semiconductor interfaces. (b) MR as a function of magnetic field (applied along the easy axis of MnAs ) for devices A and B.

Image of FIG. 2.
FIG. 2.

Measured and calculated characteristics of a vertical spin valve with -doped GaAs channel: (a) measured peak MR is shown as a function of temperature and bias. The dashed line with the latter is a guide to the eye, (b) measured peak MR vs temperature for devices C and D; the dashed lines are guides to the eye, (c) calculated spin diffusion length and SR time as a function of temperature; solid lines are guides to the eye, and (d) HRTEM image of device C layers.

Image of FIG. 3.
FIG. 3.

Energy band diagrams and electric field profile for different bias conditions and doping concentrations. Band diagrams for (a) (degenerately doped) and , (b) (nondegenerately doped) and , (c) and (low bias), and (d) and (high bias).


Generic image for table
Table I.

Parameters used in designing the various device heterostructures used in our experiment. Full heterostructure consists of substrate/MnAs/GaAs/AlAs/-GaAs/AlAs/GaAs/MnAs, while nonfull heterostructure consists of substrate/MnAs/GaAs/AlAs/-GaAs/AlAs/GaAs/TiAu.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of a high temperature vertical spin valve