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Effect of substrate misorientation on the material properties of tunnel diodes
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10.1063/1.3525158
/content/aip/journal/apl/97/23/10.1063/1.3525158
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/23/10.1063/1.3525158
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The AFM images of TD grown on GaAs substrates offcut by (a) 0°, (b) 2°, (c) 6°, (d) 10°, and (e) 15°.

Image of FIG. 2.
FIG. 2.

Depth profiles of (a) oxygen impurity, (b) aluminum, and (c) gallium obtained by SIMS for the TDs with different substrate misorientation.

Image of FIG. 3.
FIG. 3.

HRXRD rocking curves of TDs grown on misoriented GaAs substrates.

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/content/aip/journal/apl/97/23/10.1063/1.3525158
2010-12-08
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of substrate misorientation on the material properties of GaAs/Al0.3Ga0.7As tunnel diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/23/10.1063/1.3525158
10.1063/1.3525158
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