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He–I UPS spectra showing the high-binding-energy cutoff of the secondary electrons and the valence-band region for the Ag(001) substrate and for various thicknesses of the MgO overlayer. The determination of MgO VBM is shown in the inset.
Evolutions of the metal/dielectric work-function , -type Schottky barrier height , and IP vs MgO thickness.
Schematic energy level diagram of the band alignment at the MgO/Ag(001) interface with an interface energetic contribution . , , IP, and are the Ag work function, the metal/dielectric work function, the ionization potential, and the -type SBH, respectively; is the energy difference between the charge neutrality level and the MgO VBM.
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