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Work function shifts, Schottky barrier height, and ionization potential determination of thin MgO films on Ag(001)
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10.1063/1.3525159
/content/aip/journal/apl/97/23/10.1063/1.3525159
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/23/10.1063/1.3525159
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

He–I UPS spectra showing the high-binding-energy cutoff of the secondary electrons and the valence-band region for the Ag(001) substrate and for various thicknesses of the MgO overlayer. The determination of MgO VBM is shown in the inset.

Image of FIG. 2.
FIG. 2.

Evolutions of the metal/dielectric work-function , -type Schottky barrier height , and IP vs MgO thickness.

Image of FIG. 3.
FIG. 3.

Schematic energy level diagram of the band alignment at the MgO/Ag(001) interface with an interface energetic contribution . , , IP, and are the Ag work function, the metal/dielectric work function, the ionization potential, and the -type SBH, respectively; is the energy difference between the charge neutrality level and the MgO VBM.

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/content/aip/journal/apl/97/23/10.1063/1.3525159
2010-12-08
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Work function shifts, Schottky barrier height, and ionization potential determination of thin MgO films on Ag(001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/97/23/10.1063/1.3525159
10.1063/1.3525159
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